| PART |
Description |
Maker |
| STF28N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| STF24N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| STW65N65DM2AG |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| CES2316 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| AMS2301A |
Super high density cell design for extremely low
|
Advanced Monolithic Systems Ltd
|
| FDC6312P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2303 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| FDG6316P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., L...
|
| AP2122AK-3.0TRG1 AP2122AK-3.3TRG1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
Diodes
|
| CES2310 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| AMS3401M23RG |
Super high density cell design for Extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
